IndiumV3, Russie, Analysis, bibRecord, 000939

Step bunching in InGaAs/GaAs quantum wells grown by molecular beam epitaxy on GaAs(001) vicinal surfaces

Identifieur interne : 000939 ( Russie/Analysis ); précédent : 000938; suivant : 000940

Step bunching in InGaAs/GaAs quantum wells grown by molecular beam epitaxy on GaAs(001) vicinal surfaces

Auteurs : RBID : Pascal:01-0338739

Descripteurs français

Pascal (Inist)
- Etude expérimentale, Couche mince, Couche épitaxique, Croissance cristalline en phase vapeur, Epitaxie jet moléculaire, Puits quantique, Indium arséniure, Gallium arséniure, Structure surface, Gradin, TEM, Photoluminescence, Substrat, Surface vicinale, 6865F, 8115H, 7855C, InGaAs, As Ga In, Substrat GaAs.

English descriptors

KwdEn :
- Crystal growth from vapors, Epitaxial layers, Experimental study, Gallium arsenides, Indium arsenides, Molecular beam epitaxy, Photoluminescence, Quantum wells, Step, Substrates, Surface structure, TEM, Thin films, Vicinal surface.

Abstract

In the present work, we investigated the influence of step bunching on the optical properties of InGaAs/GaAs quantum wells (QWs) grown by molecular beam epitaxy (MBE) on vicinal surfaces. Photoluminescence (PL) measurements showed a larger full width at half maximum (FWHM) of the emission coming from the QWs grown on the vicinal surfaces with respect to the nominal sample. Transmission-electron-microscopy (TEM) measurements revealed the presence of step bunches that clearly roughen the interfaces of the heterostructures and worsen the optical properties of the samples.

Links toward previous steps (curation, corpus...)

to stream Main, to step Corpus: 010C02
to stream Main, to step Repository: 010939
to stream Russie, to step Extraction: 000939

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Pascal:01-0338739

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Step bunching in InGaAs/GaAs quantum wells grown by molecular beam epitaxy on GaAs(001) vicinal surfaces</title>
<author><name sortKey="Martini, S" uniqKey="Martini S">S. Martini</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Universidade de São Paulo, Instituto de Fisiea, CP 66318</s1>
<s2>05315-970 São Paulo, SP</s2>
<s3>BRA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
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<country>Brésil</country>
<wicri:noRegion>05315-970 São Paulo, SP</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Quivy, A A" uniqKey="Quivy A">A. A. Quivy</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Universidade de São Paulo, Instituto de Fisiea, CP 66318</s1>
<s2>05315-970 São Paulo, SP</s2>
<s3>BRA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
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<country>Brésil</country>
<wicri:noRegion>05315-970 São Paulo, SP</wicri:noRegion>
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</author>
<author><name sortKey="Ugarte, D" uniqKey="Ugarte D">D. Ugarte</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Laboratório Nacional de Luz Sinerotron</s1>
<s2>13083-970 Campinas, SP</s2>
<s3>BRA</s3>
<sZ>3 aut.</sZ>
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<country>Brésil</country>
<wicri:noRegion>Laboratório Nacional de Luz Sinerotron</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Lange, C" uniqKey="Lange C">C. Lange</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1</s1>
<s2>07743 Jena</s2>
<s3>DEU</s3>
<sZ>4 aut.</sZ>
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<country>Allemagne</country>
<wicri:noRegion>07743 Jena</wicri:noRegion>
<wicri:noRegion>Max-Wien-Platz 1</wicri:noRegion>
<wicri:noRegion>07743 Jena</wicri:noRegion>
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</author>
<author><name sortKey="Richter, W" uniqKey="Richter W">W. Richter</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1</s1>
<s2>07743 Jena</s2>
<s3>DEU</s3>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
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<country>Allemagne</country>
<wicri:noRegion>07743 Jena</wicri:noRegion>
<wicri:noRegion>Max-Wien-Platz 1</wicri:noRegion>
<wicri:noRegion>07743 Jena</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Tokranov, V E" uniqKey="Tokranov V">V. E. Tokranov</name>
<affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Ioffe Physical-Technical Institute, RAS</s1>
<s2>194021 St. Petersburg</s2>
<s3>RUS</s3>
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<seriesStmt><idno type="ISSN">0022-0248</idno>
<title level="j" type="abbreviated">J. cryst. growth</title>
<title level="j" type="main">Journal of crystal growth</title>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Crystal growth from vapors</term>
<term>Epitaxial layers</term>
<term>Experimental study</term>
<term>Gallium arsenides</term>
<term>Indium arsenides</term>
<term>Molecular beam epitaxy</term>
<term>Photoluminescence</term>
<term>Quantum wells</term>
<term>Step</term>
<term>Substrates</term>
<term>Surface structure</term>
<term>TEM</term>
<term>Thin films</term>
<term>Vicinal surface</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Etude expérimentale</term>
<term>Couche mince</term>
<term>Couche épitaxique</term>
<term>Croissance cristalline en phase vapeur</term>
<term>Epitaxie jet moléculaire</term>
<term>Puits quantique</term>
<term>Indium arséniure</term>
<term>Gallium arséniure</term>
<term>Structure surface</term>
<term>Gradin</term>
<term>TEM</term>
<term>Photoluminescence</term>
<term>Substrat</term>
<term>Surface vicinale</term>
<term>6865F</term>
<term>8115H</term>
<term>7855C</term>
<term>InGaAs</term>
<term>As Ga In</term>
<term>Substrat GaAs</term>
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<front><div type="abstract" xml:lang="en">In the present work, we investigated the influence of step bunching on the optical properties of InGaAs/GaAs quantum wells (QWs) grown by molecular beam epitaxy (MBE) on vicinal surfaces. Photoluminescence (PL) measurements showed a larger full width at half maximum (FWHM) of the emission coming from the QWs grown on the vicinal surfaces with respect to the nominal sample. Transmission-electron-microscopy (TEM) measurements revealed the presence of step bunches that clearly roughen the interfaces of the heterostructures and worsen the optical properties of the samples.</div>
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<fA08 i1="01" i2="1" l="ENG"><s1>Step bunching in InGaAs/GaAs quantum wells grown by molecular beam epitaxy on GaAs(001) vicinal surfaces</s1>
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<fA12 i1="02" i2="1"><s1>TU (Charles W.)</s1>
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<fA14 i1="01"><s1>Universidade de São Paulo, Instituto de Fisiea, CP 66318</s1>
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<sZ>2 aut.</sZ>
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<fA14 i1="03"><s1>Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1</s1>
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<sZ>4 aut.</sZ>
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<fA14 i1="04"><s1>Ioffe Physical-Technical Institute, RAS</s1>
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<fA15 i1="01"><s1>Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912</s1>
<s2>Beijing 100083</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
</fA15>
<fA15 i1="02"><s1>Department of Electrical and Computer Engineering, University of California</s1>
<s2>San Diego, CA</s2>
<s3>USA</s3>
<sZ>2 aut.</sZ>
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<fA20><s1>46-50</s1>
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<fC01 i1="01" l="ENG"><s0>In the present work, we investigated the influence of step bunching on the optical properties of InGaAs/GaAs quantum wells (QWs) grown by molecular beam epitaxy (MBE) on vicinal surfaces. Photoluminescence (PL) measurements showed a larger full width at half maximum (FWHM) of the emission coming from the QWs grown on the vicinal surfaces with respect to the nominal sample. Transmission-electron-microscopy (TEM) measurements revealed the presence of step bunches that clearly roughen the interfaces of the heterostructures and worsen the optical properties of the samples.</s0>
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<s2>11</s2>
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<s4>2000-09-11</s4>
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   |texte=   Step bunching in InGaAs/GaAs quantum wells grown by molecular beam epitaxy on GaAs(001) vicinal surfaces
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Step bunching in InGaAs/GaAs quantum wells grown by molecular beam epitaxy on GaAs(001) vicinal surfaces

Step bunching in InGaAs/GaAs quantum wells grown by molecular beam epitaxy on GaAs(001) vicinal surfaces

Descripteurs français

English descriptors

Abstract

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Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

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